Method of manufacturing high-integrated semiconductor device and semiconductor device manufactured using the same

ABSTRACT

A semiconductor device comprises a plurality of vertical transistors each comprising barrier metal layers corresponding to source/drain regions in which a conduction region is formed under a channel region having a pillar form, and a bit line comprising a metal layer to connect the plurality of vertical transistors.

CROSS-REFERENCE TO RELATED APPLICATION

The present application claims priority to Korean patent applicationnumber 10-2008-0075039, filed on Jul. 31, 2008, which is incorporated byreference in its entirety.

BACKGROUND OF THE INVENTION

The present invention relates to a method of manufacturing asemiconductor device and, more particularly, to a method ofmanufacturing a highly integrated semiconductor device (e.g., verticaltransistors) and improving the operating characteristic and yield of thesemiconductor device.

In general, a semiconductor is a material classified according to itselectrical conductivity and belongs to an intermediate region between aconductor and a nonconductor. The semiconductor has a property that issimilar to that of the nonconductor in a pure state, but has anincreasing electrical conductivity with the addition of impurities orother control. Such a semiconductor is used to produce semiconductorelements, such as transistors, by adding impurities and connectingconductors thereto. A device fabricated using the semiconductor elementsand configured to have a variety of functions is called a semiconductordevice. A representative example of the semiconductor device may includea semiconductor memory device.

The semiconductor memory device includes a number of unit cells eachcomprising a capacitor and a transistor. The capacitor is used totemporarily store data. The transistor is used to transfer data betweena bit line and the capacitor in response to a control signal (a wordline). The transistor is divided into three regions; a gate, a source,and a drain. Electric charges are moved between the source and the drainin response to the control signal input to the gate. The movement ofelectric charges between the source and the drain is carried out througha channel region.

In the case where a typical transistor is formed in a semiconductorsubstrate, a gate is formed in the semiconductor substrate, and a sourceand a drain are formed on both sides of the gate by doping impurities.In this case, a channel region of the transistor is formed between thesource and the drain under the gate. The transistor having thishorizontal channel region occupies a certain area of the semiconductorsubstrate. Accordingly, in the case where a complicated is semiconductormemory device is fabricated, it is difficult to reduce the area of thesemiconductor memory device because of a number of transistors includedin the semiconductor memory device.

If the area of the semiconductor memory device is reduced, productivitycan be improved because the number of semiconductor memory devices thatcan be produced per wafer can be increased. Several methods are beingproposed in order to reduce the area of the semiconductor memory device.One of the methods is to use a vertical transistor having a verticalchannel region instead of a conventional horizontal transistor having ahorizontal channel region.

BRIEF SUMMARY OF THE INVENTION

Various embodiments of the invention are directed to providing a methodof manufacturing a semiconductor device including vertical transistors,which is capable of improving the operating characteristic and yield ofa semiconductor device by forming bit lines using a conductive materialand removing alignment error when the bit lines are formed, and asemiconductor device manufactured using the same.

According to an embodiment of the present invention, a semiconductordevice comprises a plurality of vertical transistors each comprisingbarrier metal layers corresponding to source/drain regions in which aconduction region is formed under a channel region having a pillar form,and a bit line comprising a metal layer to connect the plurality ofvertical transistors.

Preferably, the barrier metal layers are formed in parallel in adirection of the bit lines under the channel region.

Preferably, the barrier metal layers and the metal layer are made of asame metal material.

Preferably, each of the vertical transistors further comprises thechannel region having the pillar form, a gate oxide layer to surroundthe channel region, and a gate electrode to surround sidewalls of thegate oxide layer.

Preferably, the gate electrode is coupled to a gate electrode of aneighboring vertical transistor by a word line, and the word line isformed over the word line in a direction crossing the bit lines.

According to another embodiment of the present invention, a method ofmanufacturing a semiconductor memory device comprises forming barriermetal layers on lower sides of each of silicon pillars coupled by a bitline, and forming gate electrodes on sidewalls of each of the siliconpillars, thereby completing a vertical transistor.

Preferably, theforming-a-barrier-metal-layer-on-lower-sides-of-silicon-pillars-coupled-by-a-bit-lineincludes forming silicon line patterns in a first direction by etching asemiconductor substrate, forming metal layers each between the siliconline patterns, a first insulating layer on the metal layers, forming thesilicon pillars by isotropically etching the silicon line patterns in asecond direction to cross the first direction, and forming the barriermetal layers on the lower sides of each of the silicon pillars, therebycompleting the bit lines.

Preferably, the formingsilicon-line-patterns-in-a-first-direction-by-etching-a-semiconductor-substrateincludes forming a mask layer over the semiconductor substrate andpatterning the mask layer by performing a photolithography process,forming first patterns by etching the semiconductor substrate using thepatterned mask layer, and forming a spacer on sidewalls of each of thefirst patterns and etching the semiconductor substrate using thepatterned mask layer and the spacers as an etch mask.

Preferably, theforming-a-mask-layer-over-the-semiconductor-substrate-and-patterning-the-mask-layer-by-performing-a-photolithography-processincludes forming a pad oxide layer on the semiconductor substrate,forming a hard mask layer on the pad oxide layer, coating a photoresistlayer on the hard mask layer and patterning the photoresist layer usinga photolithography process, etching an exposed hard mask layer using thepatterned photoresist layer as an etch mask, and etching the exposed padoxide layer using the etched hard mask layer.

Preferably, the forming-a-metal-layer-between-the-silicon-line-patternsincludes depositing the metal layer between the silicon line patterns,and etching back the metal layer to expose all the spacers.

Preferably, theforming-the-silicon-pillars-by-isotropicly-etching-the-silicon-line-patterns-in-a-second-direction-to-cross-the-first-directionincludes forming the mask layer on the first insulating layer andpatterning the mask layer having a line form of the second directioncrossing the first direction by performing a photolithography process,forming second patterns by etching the first insulating layer and thesemiconductor substrate using the patterned mask layer, and formingspacers on sidewalls of each of the second patterns and isotropicallyetching the semiconductor substrate using the patterned mask layer andthe spacers as an etch mask.

Preferably, theforming-the-barrier-metal-layers-on-the-lower-sides-of-each-of-the-silicon-pillars-thereby-completing-the-bit-linesincludes depositing a barrier metal layer on an entire surface of astructure, including the silicon pillars, removing an exposed barriermetal layer by etching back the barrier metal layer, sintering thebarrier metal layer coming into contact with the semiconductor substrateby performing annealing, etching the semiconductor substrate to acertain depth between the silicon pillars, removing the spacers, andforming an insulating layer between the silicon pillars, including theetched spaces, thereby insulating the metal layer and the barrier metallayer from each other.

Preferably, theforming-gate-electrodes-on-sidewalls-of-each-of-the-silicon-pillars-thereby-completing-a-vertical-transistorincludes forming a gate oxide layer to surround the sidewalls of each ofthe silicon pillars, and forming the gate electrodes to surround thegate oxide layer.

Preferably, the method further comprises forming word lines eachconnecting the gate electrodes, and forming an insulating layer over theword lines.

Preferably, the forming-word-lines-each-connecting-the-gate-electrodesincludes depositing an insulating layer between the gate electrodes,coating a photoresist layer on a structure including the verticaltransistors and patterning the photoresist layer by performing aphotolithography process using a mask to define regions where the wordlines are formed, exposing only upper portions of the gate electrodes byetching the insulating layer using the patterned photoresist layer as anetch mask, and forming a metal layer to connect the exposed upperportions of the gate electrodes.

According to yet another embodiment of the present invention, a methodof manufacturing a semiconductor memory device comprises forming siliconline patterns in a first direction by etching a semiconductor substrate,depositing metal layers each between the silicon line patterns, forminga plurality of silicon pillars, connected by the metal layer, by etchingthe silicon line patterns and the metal layer in a second directioncrossing the first direction, and etching lower portions of each of theplurality of silicon pillars and forming a barrier metal layerconnecting the metal layers.

Preferably, the barrier metal layer is configured to connect the metallayer in the second direction.

Preferably, the method further comprises forming a gate oxide layer andgate electrodes to surround the silicon pillar, and forming a conductivelayer to connect the gate electrodes in the first direction.

Preferably, theetching-lower-portions-of-each-of-the-plurality-of-silicon-pillars-and-forming-a-barrier-metal-layer-connecting-the-metal-layersincludes forming concave regions having a gutter form by isotropicallyetching the respective lower portions of each of the plurality ofsilicon pillars, depositing the barrier metal layer and removing theexposed barrier metal layer by performing an etchback process, andsintering the barrier metal layer remaining in the concave regions usinga silylation process.

Preferably, theetching-lower-portions-of-each-of-the-plurality-of-silicon-pillars-and-forming-a-barrier-metal-layer-connecting-the-metal-layersincludes forming concave regions having a cave form by isotropicallyetching the respective lower portions of each of the plurality ofsilicon pillars, depositing the barrier metal layer and removing theexposed barrier metal layer by performing a wet etch process, andsintering the barrier metal layer remaining in the concave regions usinga silylation process.

BRIEF DESCRIPTION OF THE DRAWINGS

FIGS. 1 a to 1 k are plan views and cross-sectional views showing amethod of manufacturing a semiconductor device including verticaltransistors according to an embodiment of the present invention; and

FIGS. 2 a to 2 q are plan views and cross-sectional views showing amethod of manufacturing a semiconductor device including verticaltransistors according to another embodiment of the present invention.

DESCRIPTION OF EMBODIMENTS

Embodiment of the present invention will now be described in detail withreference to the accompanying drawings.

FIGS. 1 a to 1 k are plan views and cross-sectional views showing amethod of manufacturing a semiconductor device including verticaltransistors according to an embodiment of the present invention. Inparticular, an example in which a vertical transistor is used as a celltransistor included in each of unit cells within a semiconductor memorydevice is described.

FIG. 1 a is a plan view showing a cell array region within thesemiconductor device, and FIG. 1 b is a cross-sectional view of thesemiconductor device taken along line X-X′ in FIG. 1 a.

A pad oxide layer 104 is formed on a semiconductor substrate 102. A hardmask nitride layer 106 is formed on the pad oxide layer 104. Aphotoresist layer is coated on the hard mask nitride layer 106, and aphotolithography process using a mask is then performed, thereby forminga first photoresist layer pattern 108. In the case where a verticaltransistor is used as the cell transistor of a unit cell, a plurality ofthe vertical transistors is formed so that they are arranged in rows andcolumns as shown in FIG. 1 a. A method of manufacturing the verticaltransistors is described below using cross sections taken along X-X′ atdifferent steps of the process.

Referring to FIG. 1 c, the hard mask nitride layer 106 and the pad oxidelayer 104 are sequentially etched using the first photoresist layerpattern 108 as an etch mask. The remaining photoresist layer pattern 108is removed.

Referring to FIG. 1 d, the exposed semiconductor substrate 102 is etchedusing the partially etched hard mask nitride layer 106 as an etch mask,thereby forming silicon pillars 110 in which channel regions of thevertical transistors will be formed.

Referring to FIG. 1 e, a gate oxide layer 112 is formed on the exposedsurface of the semiconductor substrate 102, including the sides of thesilicon pillars 110. A conductive material 114 for a gate electrode isdeposited on the entire surface of the structure, including the siliconpillars 110, and over the semiconductor substrate 102.

Referring to FIG. 1 f, the conductive material 114 for a gate electrode,formed between the silicon pillars 110 and over the semiconductorsubstrate 102, is removed. The conductive material 114 on each side ofthe silicon pillars is separated from each other. Ion implantation forthe semiconductor substrate 102 is performed to form bit line regions116. After the bit line regions 116 are formed, a nitride layer 118 isformed on the entire surface of the structure.

Referring to FIG. 1 g, a first dielectric interlayer (not shown) isdeposited between the silicon pillars 110. A polishing process iscarried out until the gate oxide layer 112 is exposed. The firstdielectric interlayer, the nitride layer 118, and the conductivematerial 114 for a gate electrode are removed by performing an etchbackprocess until part of the gate oxide layer 112 formed on the siliconpillars 110 is exposed. Through this process, a channel region,source/drain regions, and a gate electrode 114A of a transistor isdefined within each of the silicon pillars 110.

Referring to FIG. 1 h, a second dielectric interlayer 120A is furtherdeposited in such a way as to cover the silicon pillars 110 and the hardmask nitride layer 106, and a polishing process is then performed. Aphotoresist layer is coated on the polished first dielectric interlayer120A. Next, a second photoresist layer pattern 122 is formed byperforming a photolithography process using a bit line mask. The firstphotoresist layer pattern 108 shown in FIG. 1 b is used to define thepositions of the silicon pillars 110 for forming the verticaltransistors, and the second photoresist layer pattern 122 shown in FIG.1 h is used to define the positions of bit lines 116A and 116B.

The exposed first and second dielectric interlayers and 120A are removedusing the second photoresist layer pattern 122 as an etch mask. The gateoxide layer 112 exposed between the silicon pillars 110 is etched. Thebit line region 116 and the semiconductor substrate 102, exposed betweenthe silicon pillars 110 through the removal of the gate oxide layer 112,are etched, thereby forming bit lines 116A and 116B.

Referring to FIG. 1 i, the second photoresist layer pattern 122 and thesecond dielectric interlayer 120A, remaining after formation of the bitlines 116A and 116B, are removed. A third dielectric interlayer 124 isdeposited between the neighboring bit lines 116A and 116B and thenpolished.

A photoresist layer (not shown) is coated on the third dielectricinterlayer 124. A photolithography process using a mask for definingword lines is carried out, and the photoresist layer is then patterned.The third dielectric interlayer 124 exposed by the patterned photoresistlayer and the nitride layer 118 formed outside the gate electrode 114Aare etched. The third dielectric interlayer 124 is formed in order toelectrically fully insulate the neighboring bit lines 116A and 116B andalso reduce capacitance between the bit lines 116A and 116B and wordlines. Accordingly, the third dielectric interlayer 124 may preferablyremain at a certain height over the bottoms of the neighboring twosilicon pillars 110, rather than being formed solely within trenches ofthe semiconductor substrate 102.

Referring to FIG. 1 j, a conductive material is filled in a space formedby the etching of the third dielectric interlayer 124. An etchbackprocess is performed until the gate electrode 114A is exposed, therebyforming word lines 126.

Referring to FIG. 1 k, after the word lines 126 are formed, a fourthdielectric interlayer 128 is deposited. The hard mask nitride layer 106and the pad oxide layer 104 are removed by performing a polishingprocess until the top surfaces of the silicon pillars 110 are exposed.The top surface of the silicon pillar 110 exposed by the polishingprocess become the storage node of the unit cell.

As described above, when unit cells including vertical transistors areformed, silicon pillars (i.e., the channel regions of the verticaltransistors) are formed and ion implantation is then carried out inorder to form bit lines. A doped region is formed at the bottom of thesilicon pillars through ion implantation, thereby forming bit lineregions. The exposed bit line regions between silicon pillars areremoved using a photoresist layer pattern as an etch mask, therebyseparating the bit lines from each other.

In this process, however, resistance is high when data or a signal istransmitted because the bit lines are formed by an ion implantationprocess. Accordingly, the operating current of the vertical transistoris low and the amount of current transferred through the bit lines isreduced.

Further, after the bit line region is formed between the neighboringvertical transistors, part of the bit line region is etched using thephotoresist layer pattern as an etch mask to separate the bit lineregions. However, if an alignment error occurs in the process of formingthe photoresist layer pattern used as the etch mask, a semiconductordevice may be defective if the bit line regions are not separated fromeach other. In particular, for a cell array of a high-integratedsemiconductor memory device (i.e., a very narrow distance betweenneighboring silicon pillars with the silicon pillars having a very smallsize) a process margin for forming the photoresist layer pattern forseparating the bit line regions is very small. Accordingly, there is apossibility that the production yield may be low because of alignmenterror.

Another embodiment of the present invention is described in detail belowwith reference to the accompanying drawings.

Unlike the embodiment in which the bit lines are formed under thesilicon pillars through ion implantation, in the present embodiment, thebit lines are formed of a metal layer in order to lower the resistanceof the bit lines.

In more detail, after the silicon pillars are formed by etching thesemiconductor substrate in a horizontal direction and a verticaldirection, the semiconductor substrate is further etched in one of thehorizontal and vertical directions, and a metal layer is formed in theetched spaces. During the etching of the substrate in either thehorizontal or vertical direction, certain parts of the metal layer canbe removed to isolate a row or column of silicon pillars from eachother. Accordingly, the plurality of silicon pillars can be connected ineither the horizontal direction or the vertical direction through themetal layer.

If the bit lines are formed of the metal layer using this method asdescribed above, photoresist layers and masking processes are notrequired to create the bit lines. Accordingly, the present embodimentcan reduce alignment error when photolithography processes are performedseveral times using masks in which different patterns are defined.

FIGS. 2 a to 2 q are plan views and cross-sectional views showing amethod of manufacturing a semiconductor device including verticaltransistors according to another embodiment of the present invention.

FIG. 2 a is a plan view showing a first photoresist layer pattern 208formed over a semiconductor substrate 202 and cross-sectional viewsshowing a process of etching the semiconductor substrate 202 using thefirst photoresist layer pattern 208 as an etch mask. In particular, thecross sections are taken along line A-A′ and B-B′ in the plan view.

A pad oxide layer 204 is formed on the semiconductor substrate 202. Afirst hard mask layer 206, e.g., a nitride layer, is deposited on thepad oxide layer 204. The first photoresist layer pattern 208 is formedon the first hard mask layer 206. The first hard mask layer 206, the padoxide layer 204, and the semiconductor substrate 202 exposed between thefirst photoresist layer patterns 208 are sequentially etched. Withrespect to the plan view of FIG. 2 a, the first photoresist layerpatterns 208 are formed in a horizontal direction. First patterns 210Ahaving a line form are formed by etching the semiconductor substrate 202using the first photoresist layer patterns 208 as an etching mask.

Referring to FIG. 2 b, after the first photoresist layer patterns 208are removed, a first spacer layer 252, e.g., an oxide layer, is formedon the sidewalls of the first patterns 210A and the first hard masklayers 206. After depositing the first spacer layer 252, an etchbackprocess is carried out so that the first spacer layer 252 remains on thesidewalls of the first patterns 210A and the first hard mask layers 206.Next, second patterns 210B are formed by etching the semiconductorsubstrate 202 to a certain depth using the first spacer oxide layer 252as an etch mask.

Referring to FIG. 2 c, a metal layer 216A is formed between the secondpatterns 210B. After depositing the metal layer 216A on thesemiconductor substrate 202 and between the second patterns 210B, anetchback process is carried out so that the first spacer layer 252 isexposed. The metal layer 216A is used as a bit line which connects, inone direction, the lower portions (e.g., transistor drains) ofneighboring silicon pillars to be formed later.

Referring to FIG. 2 d, after forming the metal layer 216A, the firstspacer layer 252 is removed. Next, a first dielectric interlayer 220 isdeposited on the metal layer 216A and is then polished using ChemicalMechanical Polishing (CMP) so that the first hard mask layer 206 isexposed. Next, a second hard mask layer 256 is formed on the first hardmask layer 206 and the first dielectric interlayer 220.

Referring to FIG. 2 e, second photoresist layer patterns 258 are formedin a vertical direction crossing the direction where the first hard masklayer 206 and the first patterns 210A having a line form are formed.Hereinafter, subsequent processes are described with reference to thecross section taken along line A-A′, B-B′, C-C′, and D-D′ in the planview of FIG. 2 e.

The second hard mask layer 256 is patterned using the second photoresistlayer patterns 258 as an etch mask. After the second hard mask layer 256is patterned, the remaining second photoresist layer patterns 258 areremoved.

Referring to FIG. 2 f, silicon pillars 210C are formed by etching thefirst dielectric interlayer 220, the first hard mask layer 206, the padoxide layer 204, and the first patterns 210A, using the patterned secondhard mask layer 256 as an etch mask. The process of etching the firstdielectric interlayer 220 and the first patterns 210A is carried outuntil a top surface of the metal layer 216A is exposed.

Referring to FIG. 2 g, a second spacer layer 262 is formed on thesidewalls of the resulting structure, including the silicon pillars 210Cand the first dielectric interlayer 220. The second spacer layer 262 maybe formed by depositing an oxide layer and then performing an etchbackprocess in a similar way to the first spacer layer 252. Gutters 266 areformed by isotropically etching the exposed second patterns 210B usingthe second spacer layer 262 and the second hard mask layer 256 as anetch mask. Here, since the exposed second patterns 210B areisotropically etched, the gutters 266 each having a round concave formis formed at the bottoms of the silicon pillars 210C. This includesetching a portion of the semiconductor substrate 202 underneath thesilicon pillars 210C. The above isotropic etch process differs from theanisotropic etch process used in forming the first and second patterns210A and 210B shown in FIGS. 2 a and 2 b.

Referring to FIG. 2 h, a barrier metal layer 216B is deposited on theentire surface of the structure, including the silicon pillars 210C, thefirst dielectric interlayer 220, and the second hard mask layer 256. Thebarrier metal layer 216B is formed to fill the gutters 266 formed at thebottom of the silicon pillars 210C.

Referring to FIG. 2 i, the exposed barrier metal layer 216B (as seenfrom directly above) and the exposed metal layer 216A are removed byperforming an etchback process. The barrier metal layer 216B and themetal layer 216A, in contact with silicon, are sintered by performing anannealing process, thereby completing the bit lines. Consequently, themetal layer 216A connecting the plurality of silicon pillars 210Cremains under the second photoresist layer pattern 258 formed in thevertical direction (as seen from the plan view), but is removed from theremaining regions.

Further, the regions of the barrier metal layer 216B, formed to fill thegutters 266 and exposed between the silicon pillars 210C, are alsoremoved. In another embodiment of the present invention, the process ofremoving the exposed barrier metal layer 216B and the exposed metallayer 216A can be carried out with a wet etch process.

According to the above process of the present embodiment, source/drainregions of the vertical transistor, connecting the bit lines formedbetween the silicon pillars 210C, may be formed under the siliconpillars 210C. Accordingly, the degree of integration of semiconductordevices can be increased, by allowing the pillars to be spaced closertogether. Also, the resistance value of the bit lines can be reduced byusing a metal layer rather than forming the bit lines through an ionimplantation process. Furthermore, in the present embodiment, since thebarrier metal layer 216B used to fill the gutters 266 of thesemiconductor substrate 202 is sintered using an annealing process, thesilicon pillars 210C are less likely to collapse although they have ahigh aspect ratio.

Referring to FIG. 2 j, the semiconductor substrate 202 exposed betweenneighboring silicon pillars 210C is etched to a certain depth using thesecond hard mask layer 256 and the second spacer layer 262, formed inthe vertical direction where the plurality of silicon pillars 210C arecoupled to each other, as an etch mask. Accordingly, the neighboring bitlines are fully isolated. Next, the remaining second hard mask layer 256and the remaining second spacer layer 262 are removed.

Referring to FIG. 2 k, a second dielectric interlayer 260 is depositedover the semiconductor substrate 202. A polishing process is thencarried out until the surface of the first hard mask layer 206 isexposed.

Referring to the cross section of FIG. 2l, the second dielectricinterlayer 260 is etched to a certain depth by performing an etchbackprocess using the first hard mask layer 206 as an etch barrier. Thesecond dielectric interlayer 260 remains to a certain depth on the metallayer 216A formed between the silicon pillars 210C. From the plan viewof FIG. 2l, the positions of the silicon pillars 210C formed under thefirst hard mask layer 206, the positions of the barrier metal layers216B formed on the lower sides of the silicon pillars 210C, and thepositions of the metal layers 216A each connecting the bottoms of thesilicon pillars 210C can be seen.

Referring to FIG. 2 m, a gate oxide layer 212 is formed on the siliconpillars 210C and the second dielectric interlayer 260. A conductivematerial is deposited in order to form a gate electrode 214 between thesilicon pillars 210C. An etchback process is then carried out so thatthe gate electrode 214 is formed on the sidewalls of each of the siliconpillars 210C. The gate electrodes 214 are separated from each other sothat they are not connected between neighboring silicon pillars 210C.Consequently, the sidewalls of each of the silicon pillars 210C issurrounded by the gate oxide layer 212 and the gate electrode 214.

Referring to FIG. 2 n, a third dielectric interlayer 270 is depositedbetween the gate electrodes 214. A polishing process is carried outuntil the top surface of the first hard mask layer 206 is exposed. Next,the third dielectric interlayer 270 is removed to a certain depth byperforming an etchback process. Here, the third dielectric interlayer270 is removed so that it is lower than the top surface of the siliconpillars 210C. After part of the third dielectric interlayer 270 isremoved, the gate electrodes 214 exposed on the sidewalls of the siliconpillars 210C are removed, and so the gate electrodes 214 and the thirddielectric interlayers 270 are lower in height than the silicon pillars210C.

Referring to FIG. 2 o, a photoresist layer is coated on the first hardmask layers 206 and the third dielectric interlayers 270. Thirdphotoresist layer patterns 222 expose regions where word lines will beformed. The third photoresist layer patterns 222 are formed to have aline pattern of a horizontal direction similar to the pattern of thefirst photoresist layer patterns 208 used to form the silicon pillars210C. Further, the third photoresist layer patterns 222 also function toprevent the third dielectric interlayer 270 from being removed.Accordingly, the positions of the third photoresist layer patterns 222differ from those of the first photoresist layer patterns 208.

The gate oxide layer 212 exposed between the gate electrodes 214 isremoved using the third photoresist layer patterns 222 as an etch mask.Part of the exposed third dielectric interlayer 270 is also removed.Here, for the purpose of electrical insulation between the word linesand the bit lines formed on the lower sides of the silicon pillars 210C,the third dielectric interlayer 270 partially remains on the gate oxidelayer 212. The third photoresist layer patterns 222 remaining after theetching of the third dielectric interlayer 270 are removed.

Referring to FIG. 2 p, a conductive material is deposited on the gateelectrodes 214 exposed through the etching of the third dielectricinterlayer 270, and word lines 226 are formed by performing an etchbackprocess.

Referring to FIG. 2 q, after the word lines 226 are formed, a fourthdielectric interlayer 280 is formed on the word lines 226. Next, apolishing process is carried out so that the first hard mask layer 206over the silicon pillars 210C is removed, thereby exposing the topsurfaces of the silicon pillars 210C. The top surface of each of thesilicon pillars 210C corresponds to a where a storage node (e.g.,capacitor for a memory device) would be formed in subsequent processes.

As described above, in the semiconductor memory device according to theembodiment of the present invention, a unit cell includes a plurality ofvertical transistors in each of which conduction regions correspondingto source/drain regions are included on the upper and lower portions ofa pillar shape, and the vertical transistors of the unit cells areconnected by bit lines including the metal layer having a low resistancevalue.

In the present invention, in the process of forming the silicon pillarsusing the photoresist layer patterns of a line form which are arrangedin opposite directions in order to form the vertical transistors, thebit lines of a line form are formed on the lower sides of the siliconpillars. Accordingly, power consumption of a semiconductor memory devicecan be reduced and operational stability in a low power environment canbe guaranteed because the bit lines can be formed of the metal layer,etc. having a low resistance as compared with an implementation wherebit lines that are formed through ion implantation. In particular, theoperation of peripheral circuits of a unit cell, such as a sense amp,can be facilitated because the amount of current corresponding to datatransferred from a cell array within a semiconductor memory device canbe increased.

Furthermore, in the process of forming the bit lines, photoresist layerpatterns other than the photoresist layer patterns for forming thesilicon pillars are not required. Accordingly, alignment error betweenmicro patterns, easily occurring in a process of forming unit cellswithin a high-integrated semiconductor memory device, can be reducedgreatly. It leads to an improved operating characteristic and increasedyield of a semiconductor memory device including the verticaltransistors.

According to the present invention, the pattern process of forming thesilicon pillars including the channel regions of the verticaltransistors is performed twice in opposite directions, and theconductive material is formed in the bit line regions between the twicepattern processes. Accordingly, there is an advantage in that theoperating current within a semiconductor device can be increased becausethe bit lines of the present invention may have a low resistance valueas compared with the conventional bit lines formed through ionimplantation. Moreover, since the operating current within asemiconductor device can be increased, the operating speed of thesemiconductor device can be enhanced or the level of a supply voltagecan be lowered, so power consumption of the semiconductor device can bereduced.

Further, according to the present invention, the bit lines are patternedwhen the pattern process of forming the silicon pillars is performed.Accordingly, alignment error can be prevented because it is notnecessary to perform a photolithography process of separating the bitlines between the silicon pillars from each other in the known art, andso the production yield can be improved.

The above embodiments of the present invention are illustrative and notlimitative. Various alternatives and equivalents are possible. Theinvention is not limited by the embodiments described herein. Nor is theinvention limited to any specific type of semiconductor device. Otheradditions, subtractions, or modifications are obvious in view of thepresent disclosure and are intended to fall within the scope of theappended claims.

1. A method for manufacturing a semiconductor memory device, the methodcomprising: providing a pillar on a semiconductor substrate; forming abarrier metal layer on the substrate and at a lower side of the pillar,the barrier metal layer being part of a bit line; and forming a gateelectrode on a sidewall of the pillar.
 2. The method according to claim1, further comprising: etching the substrate to form a silicon linepattern in a first direction at a second lower side of the pillar;forming a metal layer in the silicon line pattern; forming a firstinsulating layer on the metal layer; and isotropically etching thesilicon line pattern in a second direction to cross the first direction,wherein the metal layer and the barrier metal layer define the bit line.3. The method according to claim 2, further comprising: forming a masklayer over the semiconductor substrate and patterning the mask layer;forming a first pattern by etching the semiconductor substrate using thepatterned mask layer; forming a spacer on a sidewall of the firstpattern; and etching the semiconductor substrate using the patternedmask layer and the spacer as an etch mask.
 4. The method according toclaim 3, further comprising: forming a pad oxide layer on thesemiconductor substrate; forming a hard mask layer on the pad oxidelayer; coating a photoresist layer on the hard mask layer and patterningthe photoresist layer; etching an exposed hard mask layer using thepatterned photoresist layer as an etch mask; and etching the exposed padoxide layer using the etched hard mask layer.
 5. The method according toclaim 2, further comprising: forming a mask layer on the firstinsulating layer and patterning the mask layer having a line form alongthe second direction is that intersects the first direction; forming asecond pattern by etching the first insulating layer and thesemiconductor substrate using the patterned mask layer; and forming aspacer on a sidewall of the second pattern and isotropically etching thesemiconductor substrate using the patterned mask layer and the spacer asan etch mask.
 6. The method according to claim 2, further comprising:depositing a barrier metal layer on an entire surface of a structure,including the pillar; removing an exposed barrier metal layer by etchingback the barrier metal layer; sintering the barrier metal layer cominginto contact with the semiconductor substrate by performing annealing;etching the semiconductor substrate to a certain depth below the pillar;removing the spacer; and forming an insulating layer between the pillar,including the etched spacer, thereby insulating the metal layer and thebarrier metal layer from each other at a given location.